Light emitting diode device

ABSTRACT

A light emitting diode device includes a substrate, a frame, an LED die and a transparent layer. The frame is located on the substrate. The frame and the substrate collectively define a concave portion. The frame has a light reflectivity ranging from 20% to 40%. The LED die is located on the substrate and within the concave portion. The transparent layer is filled into the concave portion and covering the LED die, wherein the LED die has a side-emitting surface and a top-emitting surface, the side-emitting surface has a luminous intensity greater than that of the top-emitting surface.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.17/027,731, filed Sep. 22, 2020, which claims priority to ChinaApplication Serial Number 202010151258.7, filed Mar. 6, 2020, all ofwhich are herein incorporated by reference in their entireties.

BACKGROUND Field of Invention

The present disclosure relates to a light emitting diode device.

Description of Related Art

Light emitting diode is a light-emitting element made of semiconductormaterial that can convert electrical energy into light. It has theadvantages of small size, high energy conversion efficiency, long life,power saving, etc., so it can be widely used as light source in variouselectronic applications.

When the light-emitting diodes are used as a backlight of a display, howto reduce the uneven brightness of the backlight module is a problemthat suppliers are desperately trying to solve.

SUMMARY

One aspect of the present disclosure is to provide a light emittingdiode device includes a substrate, a frame, an LED die and a transparentlayer. The frame is located on the substrate. The frame and thesubstrate collectively define a concave portion. The frame has a lightreflectivity ranging from 20% to 40%. The LED die is located on thesubstrate and within the concave portion. The transparent layer isfilled into the concave portion and covering the LED die, wherein theLED die has a side-emitting surface and a top-emitting surface, theside-emitting surface has a luminous intensity greater than that of thetop-emitting surface.

In one or more embodiments, the frame has a refractive index between1.41 and 1.6.

In one or more embodiments, the frame includes 10% to 50% long fibers.

In one or more embodiments, the frame includes at least one ofpolyethylene terephthalate, aromatic ring bonded high-grade fat-lockedsemi-aromatic nylon resin, and polyphthalamide.

In one or more embodiments, the transparent layer has a top surface thatis lower or higher than a top end of the frame.

In one or more embodiments, the transparent layer includes silicon-basedmaterials.

In one or more embodiments, the silicon-based materials include at leastone of phenyl silicone resin and methyl silicone resin.

In one or more embodiments, the LED die has a bottom surface bonded tothe substrate, and the bottom surface is a light-reflective surface.

In one or more embodiments, the side-emitting surface has a luminousintensity 10%-60% greater than that of the top-emitting surface.

In one or more embodiments, the LED die is mounted on electrodes of thesubstrate in a flip-chip manner or wire-bonded to electrodes of thesubstrate.

In summary, the light emitting diode device disclosed herein utilizesits low-reflectivity frame with a concave portion and its LED dieequipped with a greater side luminous intensity than a top luminousintensity to further expand the light emitting angle such that lightemitting diode device can effectively improve the uneven brightness of abacklight module when it is used in the backlight module of a display.

It is to be understood that both the foregoing general description andthe following detailed description are by examples, and are intended toprovide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention can be more fully understood by reading the followingdetailed description of the embodiment, with reference made to theaccompanying drawings as follows:

FIG. 1 illustrates a cross-sectional view of an emitting diode device inaccordance with an embodiment of the present disclosure;

FIG. 2 illustrates a perspective view of an LED die in accordance withan embodiment of the present disclosure;

FIG. 3 illustrates a cross-sectional view of an emitting diode device inaccordance with another embodiment of the present disclosure;

FIG. 4 is a diagram illustrating the relationship between a lightemitting angle and a luminous intensity of a light emitting diode deviceaccording to an embodiment of the present disclosure;

FIG. 5 is a diagram illustrating the relationship between a lightemitting angle and a luminous intensity of a light emitting diode deviceaccording to another embodiment of the present disclosure; and

FIG. 6 is a diagram illustrating the relationship between a lightemitting angle and a luminous intensity of a light emitting diode deviceaccording to another embodiment of the present disclosure.

DETAILED DESCRIPTION

It is to be noted that the following descriptions of preferredembodiments of this disclosure are presented herein for purpose ofillustration and description only. It is not intended to be exhaustiveor to be limited to the precise form disclosed. Also, it is alsoimportant to point out that there may be other features, elements, stepsand parameters for implementing the embodiments of the presentdisclosure which are not specifically illustrated. Thus, thespecification and the drawings are to be regard as an illustrative senserather than a restrictive sense. Various modifications and similararrangements may be provided by the persons skilled in the art withinthe spirit and scope of the present disclosure. In addition, theillustrations may not be necessarily be drawn to scale, and theidentical elements of the embodiments are designated with the samereference numerals.

Referring to FIGS. 1 and 2 , FIG. 1 illustrates a cross-sectional viewof an emitting diode device in accordance with an embodiment of thepresent disclosure, and FIG. 2 illustrates a perspective view of an LEDdie in accordance with an embodiment of the present disclosure. A lightemitting diode device 100 a includes a substrate 102, a frame 106, anLED die 104 and a transparent layer 108. The frame 106 is secured to thesubstrate 102, and the frame 106 and substrate 102 collectively defininga concave portion 106 a. The frame 106 has a light reflectivity rangingfrom 20% to 40%. The LED die 104 is mounted on the substrate 102 andwithin the concave portion 106 a. The transparent layer 108 is filledinto the concave portion 106 a to cover the LED die 104.

The LED die 104 has side-emitting surfaces (D1, D2, D3, D4), atop-emitting surface D5 and a bottom surface D6. In this embodiment, theside-emitting surfaces (D1, D2, D3, D4) of the LED die 104 have aluminous intensity greater than a luminous intensity of the top-emittingsurface D5. The LED die 104 has its bottom surface D6 bonded to thesubstrate 102, and the bottom surface D6 is a light-reflective surface.

In this embodiment, the frame 106 is made from materials including atleast one of polyethylene terephthalate, aromatic ring bonded high-gradefat-locked semi-aromatic nylon resin, and polyphthalamide, and thematerials may be mixed with 10% to 50% of long fibers in order toachieve a refractive index between 1.41 and 1.6 as well as a lightreflectivity ranging from 20% to 40%, but not being limited thereto.

In this embodiment, the top surface 108 a of the transparent layer 108is flush with a top end 106 b of the frame 106, but not being limitedthereto.

In this embodiment, the transparent layer 108 is made from materialsincluding silicon-based materials, and the silicon-based materials mayinclude at least one of phenyl silicone resin and methyl silicone resin,but not being limited thereto.

In this embodiment, the LED die 104 has its side-emitting surface (D1,D2, D3, D4) with a luminous intensity 10%-60% greater than a luminousintensity of its top-emitting surface D5, but not being limited thereto.

In this embodiment, the LED die 104 is wire-bonded to electrodes of thesubstrate 102 via wires 105, but not being limited thereto.

In this embodiment, the LED die 104 may be a blue diode chip, but notbeing limited thereto.

Referring to FIG. 3 , which illustrates a cross-sectional view of anemitting diode device in accordance with another embodiment of thepresent disclosure. The light emitting diode device 100 b is differentfrom the light emitting diode device 100 a in that the transparent layer108 has its top surface 108 a that is higher than an extension line (thedash line in FIG. 3 ) between top ends 106 b of the frame 106, or thetransparent layer 108 has its top surface 108 b that is lower than anextension line (the dash line in FIG. 3 ) between top ends 106 b of theframe 106. In this embodiment, the LED die 104 is mounted on electrodesof the substrate 102 in a flip-chip manner, rather than wire-bonded toelectrodes of the substrate 102.

Referring to FIGS. 4-6 , illustrating the relationship between a lightemitting angle and a luminous intensity of a light emitting diode deviceaccording to three different embodiments of the present disclosure. Thetwo curves in each figure represent the relationship between the lightemitting angle and the luminous intensity measured from two mutuallyperpendicular viewing angles. The relationship curve of FIG. 6represents the relationship curve measured based on the foregoingembodiment of FIG. 1 or 3 , in which the light emitting angle can reachabout 150 degrees. The relationship curve in FIG. 5 measured from adifferent LED die used in the embodiment in FIG. 1 or 3 above, and theLED die has its top-emitting surface with a luminous intensity greaterthan that of its side-emitting surface, but the frame 106 still maintaina low light reflectance of 20% to 40%, where the light emitting anglecan only reach about 138 degrees. The relationship curve in FIG. 4measured from a different LED die used in the embodiment of FIG. 1 or 3above, and the LED die has its top-emitting surface with a luminousintensity greater than that of its side-emitting surface, and the frame106 is replaced by a different frame with a higher light reflectance of90%, the light emitting angle can only reach about 114 degrees.Comparing the relationship curves in FIGS. 4-6 , it can be seen that thelight emitting diode device has a frame with a low reflectance and theside-emitting surface of the LED die has a luminous intensity greaterthan that of its top-emitting surface, which can expand its lightemitting angle to about 140-160 degrees and reduce its top luminousintensity. When a plurality of light emitting diode devices are arrangedin an array as a backlight module of a display, a greater light emittingangle can effectively improve the uneven brightness of the backlightmodule.

In summary, the light emitting diode device disclosed herein utilizesits low-reflectivity frame with a concave portion and its LED dieequipped with a side luminous intensity greater than a top luminousintensity to further expand the light emitting angle such that lightemitting diode device can effectively improve the uneven brightness of abacklight module when it is used in the backlight module of a display.

Although the present invention has been described in considerable detailwith reference to certain embodiments thereof, other embodiments arepossible. Therefore, the spirit and scope of the appended claims shouldnot be limited to the description of the embodiments contained herein.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of the presentinvention without departing from the scope or spirit of the invention.In view of the foregoing, it is intended that the present inventioncover modifications and variations of this invention provided they fallwithin the scope of the following claims.

What is claimed is:
 1. A light emitting diode device comprising: asubstrate; a frame disposed on the substrate, the frame and thesubstrate collectively defining a concave portion, the frame comprisingaromatic ring bonded high-grade fat-locked semi-aromatic nylon resin andpolyphthalamide, and having a light reflectivity ranging from 20% to40%; an LED die disposed on the substrate and within the concaveportion; and a transparent layer filled into the concave portion andcovering the LED die, wherein the LED die has a side-emitting surfaceand a top-emitting surface, the side-emitting surface has a luminousintensity greater than that of the top-emitting surface.
 2. The lightemitting diode device of claim 1, wherein the frame has a refractiveindex between 1.41 and 1.6.
 3. The light emitting diode device of claim1, wherein the frame includes 10% to 50% long fibers.
 4. The lightemitting diode device of claim 1, wherein the transparent layer has atop surface that is lower or higher than a top end of the frame.
 5. Thelight emitting diode device of claim 1, wherein the transparent layerincludes silicon-based materials.
 6. The light emitting diode device ofclaim 5, wherein the silicon-based materials include at least one ofphenyl silicone resin and methyl silicone resin.
 7. The light emittingdiode device of claim 1, wherein the LED die has a bottom surface bondedto the substrate, and the bottom surface is a light-reflective surface.8. The light emitting diode device of claim 1, wherein the side-emittingsurface has a luminous intensity 10%-60% greater than that of thetop-emitting surface.
 9. The light emitting diode device of claim 1,wherein the LED die is mounted on electrodes of the substrate in aflip-chip manner or wire-bonded to electrodes of the substrate.
 10. Alight emitting diode device comprising: a substrate; a frame disposed onthe substrate, the frame and the substrate collectively defining aconcave portion, the frame comprising aromatic ring bonded high-gradefat-locked semi-aromatic nylon resin and polyethylene terephthalate, andhaving a light reflectivity ranging from 20% to 40%; an LED die disposedon the substrate and within the concave portion; and a transparent layerfilled into the concave portion and covering the LED die, wherein theLED die has a side-emitting surface and a top-emitting surface, theside-emitting surface has a luminous intensity greater than that of thetop-emitting surface.
 11. The light emitting diode device of claim 10,wherein the frame has a refractive index between 1.41 and 1.6.
 12. Thelight emitting diode device of claim 10, wherein the frame includes 10%to 50% long fibers.
 13. The light emitting diode device of claim 10,wherein the transparent layer has a top surface that is lower or higherthan a top end of the frame.
 14. The light emitting diode device ofclaim 10, wherein the transparent layer includes silicon-basedmaterials.
 15. The light emitting diode device of claim 14, wherein thesilicon-based materials include at least one of phenyl silicone resinand methyl silicone resin.
 16. The light emitting diode device of claim10, wherein the LED die has a bottom surface bonded to the substrate,and the bottom surface is a light-reflective surface.
 17. The lightemitting diode device of claim 10, wherein the side-emitting surface hasa luminous intensity 10%-60% greater than that of the top-emittingsurface.
 18. The light emitting diode device of claim 10, wherein theLED die is mounted on electrodes of the substrate in a flip-chip manneror wire-bonded to electrodes of the substrate.